Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.016 seconds
Diana Dayas, K.; Shah, Jyoti; Gupta, Rekha; Kotnala, R.K., E-mail: rkkotnala@gmail.com
Proceedings of the seventeenth international conference on thin films: abstracts2017
Proceedings of the seventeenth international conference on thin films: abstracts2017
AbstractAbstract
[en] Multiferroics are materials in which ferromagnetism and ferroelectricity coexist. Coupling between electric polarisation and magnetic momentum is known as magnetoelectric (ME) coupling. In such materials, electric polarisation can be controlled by magnetic field and vice versa. As a result need of strong magnetic field to control magnetic moment can be avoided and this leads to miniaturisation of memory devices. In present work bilayer thin films of antiferromagnetic chromium dioxide Cr2O3 and ferroelectric barium titanate BaTiO3 (BTO) has been synthesized by RF sputtering on Si/SiO2/TiO2 substrate. Interfacial strain produced in BTO and Cr2O3 crystallite due to lattice mismatch has been calculated by William-Hall formula by X-ray diffraction peaks. Magnetic moment of bilayer thin film has been measured 15emu/cc at room temperature by Vibrating Sample Magnetometer. Ferrolectric polarization of bilayer film was observed to be 30 μC/cm2. ME coupling of bilayer thin film was observed 0.2V/Oe cm at room temperature. Such a high value of ME constant may be useful in multiferroic based memory devices. (author)
Source
CSIR-National Physical Laboratory, New Delhi (India); Indian Vacuum Society, Mumbai (India); 236 p; 2017; p. 104; ICTF-2017: 17. international conference on thin films; New Delhi (India); 13-17 Nov 2017
Record Type
Book
Literature Type
Conference
Country of publication
Reference NumberReference Number
Related RecordRelated Record
INIS VolumeINIS Volume
INIS IssueINIS Issue