[en] Functionalized form of graphene, graphene oxide (GO), is an insulator due to the presence of oxygen containing functional groups (-COOH, -OH, -O-) on edges and basal planes unlike graphene. Reduction of GO leads to change in properties of graphene oxide Due to functional groups, GO has an advantage of dispersibility in many organic solvents facilitating applications in sensors and energy storage devices. Ion beam irradiation is one of the methods for reduction of GO. In the current work, we carried out the study on the irradiation of GO film with carbon(C) ion beam. The graphene oxide films were irradiated with 80 MeV C ions with fluences ranging from 3×10¹⁰ to 3×10¹³ ions/cm². The reduction of Graphene oxide films is indicated in XRD plots. The result is supported by Raman 127 measurements by calculating the disorder parameter, ID/IG (an important parameter for carbon-based materials). Fourier Transform Infrared spectroscopy (FTIR) and UV-Vis spectroscopy also confirmed the reduction of Graphene oxide film to some extent. Atomic force microscopy (AFM) was performed to observe the topography of the pristine and irradiated films. Contact angle (CA) measurements were done to show the wetting ability of GO film. (author)