[en] For power efficient room temperature sensing application, thin films of smart materials namely Ni₅₀Mn₃₅In₁₅ were deposited at different deposition power ranging from 80W to 120W using DC magnetron sputtering and studied thoroughly. A systematic room temperature XRD measurement revealed that the structural evolution of Ni-Mn-In thin films from purely low symmetry martensitic phase to high symmetry austenitic phase is possible by varying the deposition power. The films deposited at low power mainly exhibits 10 M modulated monoclinic structure likened to L21 structure for high power deposited Ni-Mn-In thin films. The influence of deposition power on the phase transformation regime is further examined by resistivity vs temperature as well as thermo-magnetic measurements. The content of martensite and austenite phase is the key factor that dictates the first order structural transformation region of these Ni-Mn-In thin films. (author)