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Sen, Sudipta; Chakraborty, Sujata; Manik, Nabin Baran, E-mail: sagnike000@gmail.com
Proceedings of the national conference on condensed matter physics2018
Proceedings of the national conference on condensed matter physics2018
AbstractAbstract
[en] Recently the organic/polymer materials are being widely investigated to develop different electronic and optoelectronic devices. Organic devices are more flexible, light weight, cost effective and can be easily fabricated over a large area. Despite these advantages, there are also certain limitations of organic devices. One of the major limitations is the high barrier potential (φb) at metal-organic layer interface. Due to high barrier potential, the charge injection from metal to organic layer is low which attributes to higher threshold voltage (Vth). There is not much study on the barrier potential particularly at below threshold voltage (Vth) of organic devices at the metal-organic layer interface. Attempts need to be made to reduce the barrier potential to improve the charge injection at the interface of metal-organic layer and thereby to reduce the threshold voltage. At the below threshold voltage regime, the charge injection process is strongly dependent on the barrier potential at metal-organic layer interface. In this work, we have studied the barrier potential (φb) of ITO coated glass/Crystal Violet (CV)/Aluminium (Al) based organic diode and subsequently we have also observed the effect of SWCNT on this parameter φb. Presence of SWCNT reduces the barrier potential as SWCNT acts as filler and provides easy path for charge percolation. We have used ITO coated glass as front electrode and aluminium as back electrode to form the organic diode. This organic diode has been prepared with and without SWCNT by using spin coating technique. We have measured the steady state current-voltage (I-V) characteristics of the device to estimate the Vth and barrier potential height (φb) of the device. Vth is reduced from 3.93 V to 2.74 V and φb is reduced from 0.87 eV to 0.79 eV in the presence of SWCNT. Reduction of the threshold voltage and barrier potential in presence of SWCNT indicates the enhancement of charge injection through the metal-organic dye interface. By suitable doping or addition of SWCNT within the CV dye it is possible to modify the barrier potential and thereby to control the threshold voltage and the conductivity. This work is informative for studying the effect of barrier potential on the charge injection mechanism in metalorganic layer interface at below threshold voltage. (author)
Source
Department of Physics, University of Burdwan, Burdwan (India); 174 p; 2018; p. 133; CMDAYS-2018: a national conference on condensed matter physics; Burdwan (India); 29-31 Aug 2018
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