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Lonchakov, A T; Bobin, S B; Deryushkin, V V; Neverov, V N, E-mail: bobin@imp.uran.ru2019
AbstractAbstract
[en] The magnetoresistance (MR) and Hall effect of a single HgSe crystal with an extremely low electron concentration of 8.8 × 1015 cm−3 were studied in a quantising magnetic field applied both along and across the direction of the electric current. As the result, a broad plateau was discovered in the ordinary (transverse) Hall resistance in the quantum limit. Within a framework of quantum spin Hall effect for an inversion breaking Weyl semimetal, we associate this plateau with a contribution to Hall conductivity from Chern insulator edge states when only a zero Landau level is occupied. In addition to the plateau in the quantum limit, we also detected a well-developed plateau-like behaviour in a phenomenologically-introduced ‘longitudinal’ Hall resistivity. In the ‘longitudinal’ Hall conductivity, a step-like behaviour was revealed, which we identify with the discovery of half-integer quantum spin Hall effect in HgSe. This effect, being purely topological in origin, supplements the non-trivial Weyl semimetal physics and may serve as a promising magnetotransport method for the detection of Weyl nodes in a studied material. (paper)
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Available from http://dx.doi.org/10.1088/1361-648X/ab2b30; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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