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[en] We investigate magnetization switching driven by the voltage-controlled magnetic anisotropy (VCMA) effect in two series of magnetic tunnel junctions with a Ta/CoFeB/MgO structure. We demonstrate that improved thermal stability as well as the VCMA effect make it possible to achieve write error rates lower than 10−6. We also show that the thermal stability of the free layer plays an important role in suppressing increased write errors due to precession-orbit transition induced by thermal fluctuation. (paper)
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