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AbstractAbstract
[en] Bulk boat grown gallium arsenide doped to 1.7 x 1016 cm-3 with silicon was irradiated with 7 MeV electrons until the sample resistivity rose to the range 106 to 108 ohm-cm. Both resistivity versus temperature and Hall-effect versus temperature data indicate the presence of an acceptor-like level at E/sub c/ - 0.31 eV. Carrier removal was found to be approximately 2.3 x 10-3 cm-1 and annealing was found to occur near 500 K. (U.S.)
Primary Subject
Source
21. nuclear science symposium; Washington, DC; 11 Dec 1974; 14. scintillation and semiconductor counter symposium; Washington, DC; 11 Dec 1974; 6. nuclear power systems symposium; Washington, DC; 11 Dec 1974
Record Type
Journal Article
Literature Type
Conference
Journal
IEEE (Inst. Electr. Electron. Eng.) Trans. Nucl. Sci; v. NS-22(1); p. 825-828
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