[en] A continuation of previous theoretical work on axial dechanneling is described. A diffusion equation, in which the diffusion function is strongly dependent on transverse energy, accounts for the change with depth of the transverse energy distribution. In our previous work the calculated minimum yields were typically a factor of 2 to 3 too low. In this paper we have evaluated the diffusion function more carefully and found it necessary to introduce changes in both the electronic and the thermal components. Theoretical predictions agree quite well with backscattering experiments on Si and W and with transmission experiments on Si. The merits and limitations of the simple model using a steady increase in transverse energy are illustrated by a comparison of full angular scans obtained from the simple model, and from the diffusion equation. Finally, the application of the diffusion equation to the analysis of blocking dips, obtained for the determination of lifetimes of compound nuclei, is described. (6 figs, 11 refs) (U.S.)