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Maas, J.W.; Somorjai, E.; Graber, H.D.; Leun, C. van der; Endt, P.M.
Investigation of 27Al and 28Si level schemes1976
Investigation of 27Al and 28Si level schemes1976
AbstractAbstract
[en] Excitation energies of 28Si levels have been measured with the 27Al(p,γ)28Si reaction; the reaction energy is Q = 11584.5 +- 0.4 keV. The width of the semi-bound level at Esub(x) = 11.45 MeV has been determined as GAMMA = 9 +- 2 eV in a 28Si(γ,γ)28Si resonant absorption experiment; a 27Al(p,γ)28Si resonance provided γ-rays of the appropriate energy. Of 33 resonances observed in the 24Mg(α,γ)28Si reaction (Esub(α) = 1.5 - 3.8 MeV), energies, strengths and γ-ray decay have been measured; six of these resonances had not been reported previously. Gamma-ray angular distribution measurements at three resonances yield the resonance Jsup(Λ) values and the mixing ratios of the strongest transitions involved in the decay. A Jsup(π) = 3+, T = 1 assignment to the 10.38 MeV level follows from considerations based on the observed transition strengths. The arguments on which T-assignments can be based are critically reviewed. These arguments are used to assign T = 1 character to 19 states in 28Si
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Maas, J.W.; Rijksuniversiteit Utrecht (Netherlands); p. 55-86; 15 Sep 1976
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Thesis/Dissertation
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