[en] The oriented crystallization of silicon amorphous layers at continuous P⁺ ion bombardment has been studied with the help of electron diffraction, EPR, and Hall effect. Attention was given to the following problems: ion flux effect on the crystallization, correlation of the electrical and structural properties in the implanted layers, and the crystallization of silicon amorphous layers in SiO₂-Si structures. The process was found to be considerably enhanced by increasing ion flux. The crystallization layers had semimetal properties with strong inhomogeneity along the depth. Initial electrical and structural properties of the target, such as dielectric films on the surface through which irradiation was performed did not exhibit a strong effect on the process. An anomalously high conductivity of surface silicon amorphous layers (sigma approximately 3 x 10² OMEGA^-1 cm^-1) containing a superhigh concentration of impurity atoms was discovered. The factors determining the oriented crystallization and high conductivity of semiconductor amorphous layers have been discussed. (author)