[en] A procedure of the formation of structures with the potential metal-semiconductor barrier has been developed on the hole CdTe by the method of electrochemical deposition of Sn and In. High-quality surface-barrier structures (s.b:s.), which practically have no gap between the barrier metal and semiconductor, have been obtained. The stress dependence of the capacity and current, and also the spectral distribution of the photocurrent of these structures agree well with the Schottka theory. Measurement of the volt-farad dependence and of thermostimulated conductivity of the inversely displaced s.b.s. allows to detect a trap in p - CdTe