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Honstvet, I.A.; Marquis, P.M.; Smallman, R.E.
High voltage electron microscopy. 4. International congress. Toulouse, 1-4 September 19751976
High voltage electron microscopy. 4. International congress. Toulouse, 1-4 September 19751976
AbstractAbstract
[en] Foils of single crystal hexagonal silicon carbide suitable for transmission electron microscopy were irradiated in the cold stage of an A.E.I.EM7 high voltage electron microscope (H.V.E.M.) which maintained a foil temperature of 120 deg K. The results obtained in the determination of the atomic displacement energy are discussed: dependence of atomic displacement cross section and denuded zones on displacement energy; variation of the transmitted beam intensity with radiation dose; experimentally determined angular dependence of the displacement energy from 0001 pole
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Jouffrey, Bernard; Favard, Pierre (eds.); p. 213-216; 1976; Societe Francaise de Microscopie Electronique; Paris; 4. International congress on high voltage electron microscopy; Toulouse, France; 1 Sep 1975
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Conference
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