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Gemmell, D.S.; Holland, R.E.; Pietsch, W.J.; Ratkowski, A.J.; Schiffer, J.P.; Wangler, T.P.; Worthington, J.N.; Zeidman, B.; Morris, C.L.; Thiessen, H.A.
Argonne National Lab., Ill. (USA); Los Alamos Scientific Lab., N.Mex. (USA)1977
Argonne National Lab., Ill. (USA); Los Alamos Scientific Lab., N.Mex. (USA)1977
AbstractAbstract
[en] The channeling characteristics for 70.5-MeV and 255-MeV π+ and π- traversing a 120-μ thick silicon crystal have been measured. The energy loss for channeled π+ is about 2/3 that obtained for ''random'' incidence, while that for channeled π- is slightly (approximately 10 percent) higher. For both π+ and π- strong steering effects are observed under axial channeling conditions. Similar steering effects are seen in planar channeling for π+ but not for π-. The results suggest there is a high probability for π- to be captured into classical trajectories that spiral around the rows of atoms in the crystal
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1977; 12 p; 7. international conference on atomic collisions in solids; Moscow, USSR; 19 - 23 Sep 1977; Available from NTIS., PC A02/MF A01
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