[en] Transmission electron microscopy has been used to study the effects of high power laser pulses on boron, phosphorous and arsenic implanted [100] silicon crystals. No defects (dislocations, dislocation loops and/or stacking faults) were observed in either as-grown or implanted silicon after one pulse of ruby laser irradiation (lambda = 0.694 μm, pulse energy density 1.5 to 1.8 J cm^-2, 50 x 10^-9 pulse duration time). The concentration of boron in solution, as inferred from electrical measurements, could exceed the equilibrium solubility. In thermally annealed specimens, on the other hand, significant damage remained even after annealing at 1100⁰C for 30 minutes. On thermally annealing the implanted, laser-treated specimens, precipitation of the implanted boron ions occurred whenever the implanted doses were in excess of the equilibrium solubility limits. The relationship of these observations to the results of electrical measurements made on these samples will be discussed