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[en] Magnetic properties of Fe3O4 and magnetic tunnel junctions with Fe3O4 bottom electrode have been investigated. Highly conductive V/Ru layers were used as an underlayer of the Fe3O4 films. The V/Ru/Fe3O4 on  out-of-plane oriented MgO single crystal substrate show an anisotropy and high squareness along [11(bar sign)0] direction, while the Fe3O4 films with an underlayer of just Ru show isotropic behavior and low squareness. X-ray diffraction shows tensile stress on Fe3O4 for V/Ru/Fe3O4 samples. The anisotropy was shown to be induced by the stress. Finally, magnetic tunnel junction stacks of MgO/V/Ru/Fe3O4/AlO/CoFe/NiFe/Ru were deposited and the magnetic tunnel junctions with a junction size ranging from 2x2 μm2 to 9x9 μm2 were fabricated by optical lithography. The junctions show magnetoresistance ratios of ∼14% and no geometrical effect due to the junction size
[en] Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 106 A/cm2 using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm2 in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.