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[en] Highlights: • Nanolaminate thin films of Al2O3/TiO2 with different bilayer density were prepared by ALD method. • A new multidimensional reconstruction method was implemented to analyze the nanomechanical response of the samples. • Mechanical response of the nanolaminates showed to be improved by layer thickness and follow the behavior of a nanocomposite coating. • The method implemented allows the reconstruction of 4D mechanical data at the nanoscale. A novel method of nanomechanical testing of multilayered Al2O3/TiO2 nanolaminates was implemented by the nanoindentation technique. The indentation data were reconstructed and filtered by a statistical analysis algorithm and presented as a function of the penetration depth of the indenter. Results show the increment of mechanical properties on the laminates as a function of the amorphous interfaces of the individual layers and the effective control of the wear rate of the structures for further applications. The results presented show both important insights on the mechanical behavior of nanolaminates and the further applicability of the reconstruction model for error reduction on mechanical testing of nanolaminate samples.
[en] Highlights: • Porous silicon/TiO_2 nanocomposites have been investigated. • Morphology and chemical composition of PSi/TiO_2 nanocomposites were established. • Valence-band XPS maximums for PSi/TiO_2 nanocomposites were found and analyzed. - Abstract: PSi/TiO_2 nanocomposites fabricated by atomic layer deposition (ALD) and metal-assisted chemical etching (MACE) were investigated. The morphology and phase structure of PSi/TiO_2 nanocomposites were studied by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) with an energy dispersive X-ray spectroscopy (EDX) and Raman spectroscopy. The mean size of TiO_2 nanocrystals was determined by TEM and Raman spectroscopy. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical elemental composition by observing the behavior of the Ti 2p, O 1s and Si 2p lines. TEM, Raman spectroscopy and XPS binding energy analysis confirmed the formation of TiO_2 anatase phase inside the PSi matrix. The XPS valence band analysis was performed in order to investigate the modification of PSi/TiO_2 nanocomposites electronic structure. Surface defects states of Ti"3"+ at PSi/TiO_2 nanocomposites were identified by analyzing of XPS valence band spectra
[en] Highlights: • ZnO-polyacrylonitrile (ZnO-PAN) nanofibers were obtained by electrospinning method and atomic layer deposition. • Relation between structural and electronic properties of ZnO-PAN nanofibers were established. • DFT for calculation of ZnO work function was performed. - Abstract: We report the study of ZnO-polyacrylonitrile (ZnO-PAN) nanofibers fabricated by the combination of electrospinning and atomic layer deposition. The latter technique enables us to control the size of the surface of ZnO 1D nanostructures and hence its effectiveness for energy and biosensor applications. We observe the tendency of ZnO to form nanograins with increase of the layer thickness, and investigate the influence of the grain size on the electronic properties of the nanofibers. It is demonstrated that the ZnO work function (Φ) is strongly affected by surface band bending in the ZnO layer. The observed change of Φ in ZnO layers results from the curvature of the grain surface as well as the presence of the hydroxyl and oxygen groups, adsorbed on ZnO surface and is in a good agreement with theoretical prediction.
[en] TiO_2 thin films were grown on highly-doped p-Si (100) macro- and mesoporous structures by atomic layer deposition (ALD) using TiCl_4 and deionized water as precursors at 300 °C. The crystalline structure, chemical composition, and morphology of the deposited films and initial silicon nanostructures were investigated by scanning electron microscopy, transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy and X-ray diffraction (XRD). The mean size of TiO_2 crystallites was determined by TEM, XRD and Raman spectroscopy. It was shown that the mean crystallite size and the crystallinity of the TiO_2 are influenced dramatically by the morphology of the porous silicon, with the mesoporous silicon resulting in a much finer grain size and amorphous structure than the macroporous silicon having a partially crystal anatase phase. A simple model of the ALD layer growth inside the pores was presented. - Highlights: • The morphology and chemical composition of TiO_2 and porous Si were established. • The approximate size of TiO_2 nanocrystals was estimated. • The model of the atomic layer deposition coating in the porous Si was presented
[en] Highlights: • Organized Si nanowires (Si NWs) were produced by metal-assisted chemical etching. • The SiNWs were coated with a ZnO layer by Atomic Layer Deposition (ALD) • The structural and optical properties of the obtained nanostructures were studied. • Photoluminescence (PL) showed the domination of defect emission bands. • The PL intensity of SiNWs/ZnO decreased with the increase of Si NWs etching time. - Abstract: In this work, we report proof-of-concept results on the synthesis of Si core/ ZnO shell nanowires (SiNWs/ZnO) by combining nanosphere lithography (NSL), metal assisted chemical etching (MACE) and atomic layer deposition (ALD). The structural properties of the SiNWs/ZnO nanostructures prepared were investigated by X-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopies. The X-ray diffraction analysis revealed that all samples have a hexagonal wurtzite structure. The grain sizes are found to be in the range of 7–14 nm. The optical properties of the samples were investigated using reflectance and photoluminescence spectroscopy. The study of photoluminescence (PL) spectra of SiNWs/ZnO samples showed the domination of defect emission bands, pointing to deviations of the stoichiometry of the prepared 3D ZnO nanostructures. Reduction of the PL intensity of the SiNWs/ZnO with the increase of SiNWs etching time was observed, depicting an advanced light scattering with the increase of the nanowire length. These results open up new prospects for the design of electronic and sensing devices.