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Jaroszynski, J.
Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Faculty of Physics, Warsaw University, Warsaw (Poland); High Pressure Research Center, Polish Academy of Sciences, Warsaw (Poland)1999
Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Faculty of Physics, Warsaw University, Warsaw (Poland); High Pressure Research Center, Polish Academy of Sciences, Warsaw (Poland)1999
AbstractAbstract
[en] This paper reviews recent milikelvin studies of magnetoconductance and noise in nanostructures of a diluted magnetic semiconductors n-Cd1-xMnxTe. These studies were particularly rewarding for probing the influence of magnetic ions upon mesoscopic phenomena. The accumulated results demonstrated the existence of a new driving mechanism of the universal conductance fluctuations in magnetic systems. Several signatures of spin-glass freezing were observed, such as the appearance of 1/f conductance noise, aging, thermal, and magnetic irreversibilities as well as strong increase in the amplitude of both conductance fluctuations and noise when temperature and the magnetic field were lowered below the freezing line. A statistical analysis of conductance noise made it possible to investigate the nature of excitations in spin-glass phase, and discriminate between competing theoretical models. (author)
Secondary Subject
Source
28. International School on Physics of Semiconducting Compounds; Jaszowiec (Poland); 6-11 Jun 1999; KBN GRANT NO. 2 P03B 06411 AND 2P03B 11914; PBZ-28.11; 26 refs, 6 figs
Record Type
Journal Article
Literature Type
Conference
Journal
Acta Physica Polonica. Series A; ISSN 0587-4246;
; v. 96(5); p. 641-650

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Jaroszynski, J.
Abstracts of 28. International School on Physics of Semiconducting Compounds Jaszowiec '991999
Abstracts of 28. International School on Physics of Semiconducting Compounds Jaszowiec '991999
AbstractAbstract
No abstract available
Original Title
CdTe based semiconductors
Secondary Subject
Source
Polish State Committee for Scientific Research, Warsaw (Poland); Ministry of National Education (Poland); Polish Academy of Sciences, Committee on Physics and Office of International Relations (Poland); Fundation Pro Physica (Poland); Polish Physical Society (Poland); Leopold Kronenberg Fundation (Poland); 276 p; 1999; p. 92; 28. International School on Physics of Semiconducting Compounds Jaszowiec'99; Ustron-Jaszowiec (Poland); 6-11 Jun 1999; Available at Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-910 Warsaw, Poland; 4 refs
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Miscellaneous
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Conference
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Jaroszynski, J.; Wrobel, J.; Sawicki, M.
Institute of Physics Polish Academy of Sciences, Warsaw (Poland); Faculty of Physics, University of Warsaw, Warsaw, (Poland); High Pressure Research Center, Polish Academy of Sciences, Warsaw (Poland)1996
Institute of Physics Polish Academy of Sciences, Warsaw (Poland); Faculty of Physics, University of Warsaw, Warsaw, (Poland); High Pressure Research Center, Polish Academy of Sciences, Warsaw (Poland)1996
AbstractAbstract
[en] We present millikelvin studies of magneto-resistance for epitaxial films and wires of CdTe:In. In comparison to the data with theoretical predictions for the weakly localized regime we put into the evidence the presence of the temperature-induced dimensional crossovers in the studied systems. Our measurements probe the electron phase-breaking rate and indicate that the main dephasing mechanism arises from the electron scattering from thermal fluctuations of three- or two-dimensional electron liquid. (author)
Primary Subject
Secondary Subject
Source
25. International School of Physics of Semiconducting Compounds. Part 2; Jaszowiec (Poland); 27-31 May 1996; KBN GRANT NO. 8-T11B-02108; 11 refs, 2 figs
Record Type
Journal Article
Literature Type
Conference
Journal
Acta Physica Polonica. Series A; ISSN 0587-4246;
; v. 90(5); p. 1027-1031

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Karczewski, G.; Jaroszynski, J.; Kurowski, M.; Barcz, A.; Wojtowicz, T.; Kossut, J.
Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Faculty of Physics, Warsaw University, Warsaw (Poland); High Pressure Research Center, Polish Academy of Sciences, Warsaw (Poland)1997
Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Faculty of Physics, Warsaw University, Warsaw (Poland); High Pressure Research Center, Polish Academy of Sciences, Warsaw (Poland)1997
AbstractAbstract
[en] We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd1-yMgyTe two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd1-yMgyTe structures resulted in fabrication of a 2D electron gas with mobility exceeding 105 cm2/(Vs). This is the highest mobility reported in wide-gap II-VI materials
Primary Subject
Source
26. International School on Physics of Semiconducting Compounds; Jaszowiec (Poland); 6-13 Jun 1996; KBN GRANT NO. 8T11B 014 11; 6 refs, 2 figs
Record Type
Journal Article
Literature Type
Conference
Journal
Acta Physica Polonica. Series A; ISSN 0587-4246;
; v. 92(4); p. 829-832

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Wrobel, J.; Jaroszynski, J.; Dietl, T.; Reginski, K.; Bugajski, M.
Abstracts of 27. International School on Physics of Semiconducting Compounds Jaszowiec '981998
Abstracts of 27. International School on Physics of Semiconducting Compounds Jaszowiec '981998
AbstractAbstract
No abstract available
Original Title
thin films
Source
Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Faculty of Physics, Warsaw University, Warsaw (Poland); High Pressure Research Center UNIPRESS, Warsaw (Poland); 175 p; 1998; p. 89; 27. International School on Physics of Semiconducting Compounds Jaszowiec '98; Ustron-Jaszowiec (Poland); 7-12 Jun 1998; Available from Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-910 Warsaw, Poland; 2 refs
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Miscellaneous
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Conference
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AbstractAbstract
[en] We present a broad study by multiple techniques of the critical current and critical current density of a small but representative set of nominally identical commercial RE123 (REBa_2Cu_3O_7_−_δ, RE = rare Earth, here Y and Gd) coated conductors (CC) recently fabricated by SuperPower Inc. to the same nominal high pinning specification with BaZrO_3 and RE_2O_3 nanoprecipitate pinning centers. With high-field low-temperature applications to magnet technology in mind, we address the nature of their tape-to-tape variations and length-wise I _c inhomogeneities by measurements on a scale of about 2 cm rather than the 5 m scale normally supplied by the vendor and address the question of whether these variations have their origin in cross-sectional or in vortex pinning variations. Our principal method has been a continuous measurement transport critical current tool (YateStar) that applies about 0.5 T perpendicular and parallel to the tape at 77 K, thus allowing variations of c-axis and ab-plane properties to be clearly distinguished in the temperature and field regime where strong pinning defects are obvious. We also find such in-field measurements at 77 K to be more valuable in predicting 4.2 K, high-field properties than self-field, 77 K properties because the pinning centers controlling 77 K performance play a decisive role in introducing point defects that also add strongly to J _c at 4.2 K. We find that the dominant source of I _c variation is due to pinning center fluctuations that control J _c, rather than to production defects that locally reduce the active cross-section. Given the 5–10 nm scale of these pinning centers, it appears that the route to greater I _c homogeneity is through more stringent control of the REBCO growth conditions in these Zr-doped coated conductors. (paper)
Primary Subject
Source
Available from http://dx.doi.org/10.1088/0953-2048/29/5/054006; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
Journal
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INIS VolumeINIS Volume
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Andrearczyk, T.; Jaroszynski, J.; Sawicki, M.; Karczewski, G.; Wrobel, J.; Wojtowicz, T.; Dietl, T.; Papis, E.; Kaminska, E.; Piotrowska, A.
Abstracts of 30. International School on Physics of Semiconducting Compounds Jaszowiec 20012001
Abstracts of 30. International School on Physics of Semiconducting Compounds Jaszowiec 20012001
AbstractAbstract
No abstract available
Primary Subject
Secondary Subject
Source
Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Faculty of Physics, Warsaw University, Warsaw (Poland); High Pressure Research Center UNIPRESS, Warsaw (Poland); 146 p; 2001; p. 107; 30. International School on Physics of Semiconducting Compounds Jaszowiec 2001; Ustron-Jaszowiec (Poland); 1-8 Jun 2001; Available at Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-910 Warsaw, Poland
Record Type
Miscellaneous
Literature Type
Conference
Country of publication
CADMIUM COMPOUNDS, CHEMICAL COMPOSITION, DOPED MATERIALS, ELECTRIC CONDUCTIVITY, ELECTRON DENSITY, ELECTRON MOBILITY, HALL EFFECT, HETEROJUNCTIONS, IODINE ADDITIONS, MAGNESIUM COMPOUNDS, MAGNETIC FIELDS, MAGNETORESISTANCE, MANGANESE COMPOUNDS, MOLECULAR BEAM EPITAXY, QUANTUM MECHANICS, TELLURIDES, TEMPERATURE DEPENDENCE, THIN FILMS
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AbstractAbstract
[en] We have investigated magneto-photoluminescence spectra in a modulation n-doped CdTe/Cd0.865Mg0.135Te single quantum well in magnetic fields up to 40 T at low temperatures. High-mobility two-dimensional carriers (μ ∼ 130 000cm2/V s at n = 4.4 x 1011cm-2) realized in this new system exhibited photoluminescence anomalies associated with the integer and fractional quantum Hall effect. In addition to the oscillatory features of the peak shifts, we observed additional high-energy peaks at the Landau filling factor υ ≤ 2. Photoluminescence polarization was investigated in the region of various low Landau-fillings
Source
Rhmf'97. Research in magnetic fields; Sydney, NSW (Australia); 4-6 Aug 1997; Country of input: Australia; 11 refs., 4 figs. Copyright (c) 1998 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved
Record Type
Journal Article
Literature Type
Conference; Numerical Data
Journal
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INIS VolumeINIS Volume
INIS IssueINIS Issue
Le Van Khoi, J.; Jaroszynski, J.; Witkowska, B.; Mycielski, A.; Galazka, R.R.; Cisowski, J.
Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Faculty of Physics, Warsaw University, Warsaw (Poland); High Pressure Research Center, Polish Academy of Sciences, Warsaw (Poland)1997
Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Faculty of Physics, Warsaw University, Warsaw (Poland); High Pressure Research Center, Polish Academy of Sciences, Warsaw (Poland)1997
AbstractAbstract
[en] The high pressure Bridgman technique was used to growth Zn1-xMnxTe:P crystals. Under N2 pressure of 30 atm., we obtained the p+-Zn1-xMnxTe single crystals 8-10 mm in diameter, with free-carrier densities as high as p ∼ 8 x 1018 cm-3 and the room temperature conductivity ρ(RT) ∼ 30 a-1 cm-1. Magnetoresistance measurements were carried out down to 1.3 K and up to 6 T. In Zn1-xMnxTe:P a strong increase in the acceptor binding energy as well as immense (ρ(0,1.3 K)/ρ(6 T,1.3 K) > 103) negative magnetoresistance are observed, by contrast, not seen in diamagnetic ZnTe:P. It is shown that these effects come from the formation of bound magnetic polarons and their destruction by an external magnetic field. (author)
Primary Subject
Source
26. International School on Physics of Semiconducting Compounds; Jaszowiec (Poland); 6-13 Jun 1996; FPS SEZAM GRANT NO. 91/94; 7 refs, 2 figs
Record Type
Journal Article
Literature Type
Conference
Journal
Acta Physica Polonica. Series A; ISSN 0587-4246;
; v. 92(4); p. 833-836

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INIS VolumeINIS Volume
INIS IssueINIS Issue
Jaroszynski, J.; Karczewski, G.; Wrobel, J.; Wojtowicz, T.; Kossut, J.; Dietl, T.; Papis, E.; Kaminska, E.; Piotrowska, A.
Abstracts of 27. International School on Physics of Semiconducting Compounds Jaszowiec '981998
Abstracts of 27. International School on Physics of Semiconducting Compounds Jaszowiec '981998
AbstractAbstract
No abstract available
Primary Subject
Secondary Subject
Source
Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Faculty of Physics, Warsaw University, Warsaw (Poland); High Pressure Research Center UNIPRESS, Warsaw (Poland); 175 p; 1998; p. 12; 27. International School on Physics of Semiconducting Compounds Jaszowiec '98; Ustron-Jaszowiec (Poland); 7-12 Jun 1998; Available from Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-910 Warsaw, Poland; 4 refs
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Miscellaneous
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Conference
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