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[en] We investigated a multi-layer structure for a broadband coherent perfect absorber (CPA). The transfer matrix method (TMM) is useful for analyzing the optical properties of structures and optimizing multi-layer structures. The broadband CPA strongly depends on the phase of the light traveling in one direction and the light reflected within the structure. The TMM simulation shows that the absorption bandwidth is increased by 95% in a multi-layer CPA compared to that in a single-layer CPA.
[en] Highlights: • Surface behavior of GaSb and InSb was investigated in acidic and basic solutions. • H_2O_2 plays a key role in the surface oxidation of GaSb and InSb in acidic hydrochloric acid/hydrogen peroxide mixture (HPM) solution. • GaSb and InSb surfaces were hardly oxidized in basic ammonium hydroxide/hydrogen peroxide mixture (APM) solution in the presence of H_2O_2. • The effect of dilution of APM solution on the oxidation of the InSb surface was minimal. • Surface characteristics of GaSb and InSb in HPM and APM solutions are mainly determined by the behaviors of the group III elements rather than the group V element. - Abstract: Gallium antimonide (GaSb) and indium antimonide (InSb) have attracted strong attention as new channel materials for transistors due to their excellent electrical properties and lattice matches with various group III–V compound semiconductors. In this study, the surface behavior of GaSb (100) and InSb (100) was investigated and compared in hydrochloric acid/hydrogen peroxide mixture (HPM) and ammonium hydroxide/hydrogen peroxide mixture (APM) solutions. In the acidic HPM solution, surface oxidation was greater and the etching rates of the GaSb and InSb surfaces increased when the solution is concentrated, which indicates that H_2O_2 plays a key role in the surface oxidation of GaSb and InSb in acidic HPM solution. However, the GaSb and InSb surfaces were hardly oxidized in basic APM solution in the presence of H_2O_2 because gallium and indium are in the thermodynamically stable forms of H_2GaO_3"− and InO_2"−, respectively. When the APM solution was diluted, however, the Ga on the GaSb surface was oxidized by H_2O, increasing the etching rate. However, the effect of dilution of the APM solution on the oxidation of the InSb surface was minimal; thus, the InSb surface was less oxidized than the GaSb surface and the change in the etching rate of InSb with dilution of the APM solution was not significant. Additionally, the oxidation behavior of gallium and indium was more sensitive to the composition of the HPM and APM solutions than that of antimony. Therefore, the surface properties and etching characteristics of GaSb and InSb in HPM and APM solutions are mainly dependent on the behavior of the group III elements rather than the group V elements.
[en] Highlights: • Two-step photoresist removal process using two organic solvents was developed. • Photoresist on trench patterned GaAs was removed by two-step sequence. • Acetonitrile with dimethyl sulfoxide removed implanted photoresists at 30 °C. • Affinity and permeability of solvent through photoresist determine photoresist removal. - Abstract: Organic solvents can effectively remove photoresists on III–V channels without damage or etching of the channel material during the process. In this study, a two-step sequential photoresist removal process using two different organic solvents was developed to remove implanted ArF and KrF photoresists at room temperature. The effects of organic solvents with either low molar volumes or high affinities for photoresists were evaluated to find a proper combination that can effectively remove high-dose implanted photoresists without damaging GaAs surfaces. The performance of formamide, acetonitrile, nitromethane, and monoethanolamine for the removal of ion-implanted ArF and KrF photoresists were compared using a two-step sequential photoresist removal process followed by treatment in dimethyl sulfoxide (DMSO). Among the various combinations, the acetonitrile + DMSO two-step sequence exhibited the best removal of photoresists that underwent ion implantation at doses of 5 × 10"1"3–5 × 10"1"5 atoms/cm"2 on both flat and trench-structured GaAs surfaces. The ability of the two-step process using organic solvents to remove the photoresists can be explained by considering the affinities of solvents for a polymer and its permeability through the photoresist.
[en] A novel optical interferometric scheme for ultrahigh-speed three-dimensional morphometry is proposed. The system is based on wide-field optical coherence tomography (WF-OCT) but with optically chopped illumination. The chopping frequency is feedback-controlled to be always matched with the Doppler frequency of the OCT interferometer, which provides an efficient page-wide demodulation suitable for ultrahigh-speed volumetric imaging. To compensate the unwanted variation in the OCT Doppler frequency of the system, the illumination frequency is phase-locked with an auxiliary laser interferometer which shares the reference arm with the OCT interferometer. The two-dimensional (2D) interference signals projected on the 2D array pixels of a 200 Hz CCD are accumulated during one imaging frame of the CCD. Then, each pixel of the CCD demodulates the OCT signal automatically. Owing to the proposed active frequency-locked illumination scheme, the demodulation does not depend on the variation in the axial scanning speed. Volumetric topograms or/and tomograms of several samples were achieved and rendered with a sensitivity of 58 dB at an axial scan speed of 0.805 mm s−1