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[en] The use of semiconductor sensors in dosimeters is attractive for a variety of reasons including potential low cost and high sensitivity. However, the accurate measurement of the radiation dose to tissue using solid state detectors is made difficult by the relatively high atomic number of semiconductor materials. This leads to an over response to gamma ray energies below 100 keV and an under response above that. If the energy spectrum is known, corrections can be applied to yield accurate dose. In real life situations, however, the energy spectrum is not always known and may be difficult to determine at high flux rates. Also, in some cases, the energy spectrum may change with time. This paper reports that, by operating a custom-designed CdTe sensor in the pulse mode and measuring the average energy deposited, a nearly-linear relationship between the tissue dose rate and the sensor signal was obtained. Based on this technique, a prototype detector and dosimeter system were developed
[en] Research in dosimetry systems at Radiation Monitoring Devices has resulted in the development of a technique which permits the energy deposited in the CdTe detector to be directly related to the tissue dose over a wide range of energy. This relationship has been utilized in the development of two prototype dosimeter instruments. The first of these serves as the basis for a compact unit which provides nearly tissue equivalent response to personnel exposure to potentially large and uncharacterized doses of radiation. The second instrument is a solid state integrating dosimeter system, developed for space flight applications, which is designed to monitor crew exposure to gamma rays and particles. Several CdTe detectors were used with filtering and anticoincidence techniques to separately monitor exposure to gamma rays and charged particles. (orig.)
[en] In semiconductor crystal growth processes, the quality of the final product strongly depends on adequate control of freezing parameters including rate of solidification, the position and shape of the liquid-solid interface, and the temperature gradient at the interface. In particular, the shape and position of the interface directly affects material properties and must be controlled to a particular geometry to prevent loss of crystallinity and the formation of defects like spurious nucleation and twinning. The interface shape also affects stress in the crystals and can help prevent the resolidified material from sticking to the ampoule
[en] A new nuclear survey instrument with an imaging capability is being developed for remotely locating high level radioactive sources with minimal operator exposure. It combines an image of the distribution of radioactivity with a video image of the area containing the source, allowing rapid, remote location of the source. The nuclear imaging system is based on a position sensitive photomultiplier tube and a diverging hole collimator. In this paper the design and measured performance of a prototype device are discussed
[en] Experiments on co-doped CsI:Tl,Sm suggest that samarium electron traps scavenge electrons from thallium traps and that electrons subsequently released by samarium recombine non-radiatively with trapped holes, thus suppressing afterglow. These experiments support the inference that electrons tunnel freely between samarium ions and are trapped preferentially as substitutional Sm+ near VKA(Tl+) centers where non-radiative recombination is the rate-limiting step. Combined radioluminescence, afterglow and thermoluminescence on single-crystal samples of CsI:Tl and CsI:Tl,Sm, recorded sequentially at adjusted gain settings following low-temperature irradiation, reveal reversible radiation damage as well.
[en] Combined radioluminescence, afterglow and thermoluminescence experiments on single-crystal samples of co-doped CsI:Tl,Sm suggest that deeper samarium electron traps scavenge electrons from shallower thallium traps and that electrons subsequently released by samarium recombine non-radiatively with holes trapped as VKA(Tl+) centers, thus providing a mechanism for suppression of trapped-charge accumulation in repetitive applications. In the present investigation, experiments performed on two single-crystal samples of CsI:Tl,Sm with nominal concentrations of 0.11% Tl+ and of 0.2% and 0.05% Sm2+, respectively, support the inference that electrons tunnel freely between samarium ions and are trapped preferentially near VKA(Tl+) centers where non-radiative recombination is the rate-limiting step.
[en] One of the most important contributions to the radiation exposure of astronauts engaged in space flight is the significant flux of high energy neutrons arising from both primary and secondary sources of ionizing radiation. Under NASA sponsorship, the authors are developing a solid state neutron sensor capable of being incorporated into a very compact, flight instrument to provide high quality real time measurement of this important radiation flux. The dosimeter uses a special, high neutron sensitivity, PIN diode that is insensitive t the other forms of ionizing radiation. The dosimeter will have the ability to measure and record neutron dose over a range of 50 microgray to tens of milligrays (5 millirads to several rads) over a flight of up to 30 days. the performance characteristics of the PIN diode with a detailed description of the overall dosimeter is presented. in this paper
[en] We have developed microstructured Lu2O3:Eu scintillator films capable of providing spatial resolution on the order of micrometers for hard X-ray imaging. In addition to their extraordinary resolution, Lu2O3:Eu films simultaneously provide high absorption efficiency for 20 to 100 keV X-rays, and bright 610 nm emission, with intensity rivalling that of the brightest known scintillators. At present, high spatial resolution of such a magnitude is achieved using ultra-thin scintillators measuring only about 1 to 5 μm in thickness, which limits absorption efficiency to ∼3% for 12 keV X-rays and less than 0.1% for 20 to 100 keV X-rays, resulting in excessive measurement time and exposure to the specimen. Lu2O3:Eu would significantly improve that (99.9% - 12 keV and 30% - 70 keV). Important properties and features of our Lu2O3:Eu scintillator material, fabricated by our electron-beam physical vapour deposition (EB-PVD) process, combines superior density of 9.5 g/cm3, microcolumnar structure emitting 48000 photons/MeV whose wavelength is an ideal match for the underlying CCD detector array. We grew thin films measuring 5–50μm in thickness as well as covering areas up to 5 × 5 cm2 which can be a suitable basis for microtomography, digital radiography as well as CT and hard X-ray Micro-Tomography (XMT).
[en] Thick segmented scintillating converters coupled to optical imaging detectors offer the advantage of large area, high stopping power sensors for high energy X-ray digital imaging. The recent advent of high resolution and solid state optical sensors such as amorphous silicon arrays and CCD optical imaging detectors makes it feasible to build large, cost effective imaging arrays. This technology, however, shifts the sensor cost burden to the segmented scintillators needed for imaging. The required labor intensive fabrication of high resolution, large area hard X-ray converters results in high cost and questionable manufacturability on a large scale. The authors report on recent research of a new segmented X-ray imaging converter. This converter is fabricated using vacuum injection and crystal growth methods to induce defect free, high density scintillating fibers into a collimator matrix. This method has the potential to fabricate large area (>400 cm2), thick (10 cm) segmented scintillators. Spatial resolution calculations of these scintillator injected collimators show that the optical light spreading is significantly reduced compared to single crystalline scintillators and sub-millimeter resolution can be achieved for 10 MeV photons. They have produced 2.5 cm thick converters and sub-millimeter resolution X-ray images acquired with the segmented converter coupled to a cooled CCD camera provided the resolution to characterize the converter efficiency and noise. The proposed concept overcomes the above mentioned limitations by producing a cost-effective technique of fabricating large area X-ray scintillator converters with high stopping power and high spatial resolution. This technology will readily benefit diverse fields such as particle physics, astronomy, medicine, as well as industrial nuclear and non-destructive testing
[en] Thick films of cesium iodide (CsI) are often used to convert x-ray images into visible light. Spreading of the visible light within CsI, however, reduces the resolution of the resulting image. Anisotropic etching of the CsI film into an array of micropixels can improve the image resolution by confining light within each pixel. The etching process uses a high-density inductively coupled plasma to pattern CsI samples held by a heated, rf-biased chuck. Fluorine-containing gases such as CF4 are found to enhance the etch rate by an order of magnitude compared to Ar+ sputtering alone. Without inert-gas ion bombardment, however, the CF4 etch becomes self-limited within a few microns of depth due to the blanket deposition of a passivation layer. Using CF4+Ar continuously removes this layer from the lateral surfaces, but the formation of a thick passivation layer on the unbombarded sidewalls of etched features is observed by scanning electron microscopy. At a substrate temperature of 220 deg. C, the minimum ion-bombardment energy for etching is Ei∼50 eV, and the rate depends on Ei1/2 above 65 eV. In dilute mixtures of CF4 and Ar, the etch rate is proportional to the gas-phase density of atomic fluorine. Above 50% CF4, however, the rate decreases, indicating the onset of net surface polymer deposition. These observations suggest that anisotropy is obtained through the ion-enhanced inhibitor etching mechanism. Etching exhibits an Arrhenius-type behavior in which the etch rate increases from ∼40 nm/min at 40 deg. C to 380 nm/min at 330 deg. C. The temperature dependence corresponds to an activation energy of 0.13±0.01 eV. This activation energy is consistent with the electronic sputtering mechanism for alkali halides