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[en] The thin films of cadmium indium selenide (CdIn2Se4) have been deposited onto amorphous glass substrates using simple and low cost spray pyrolysis technique. The aqueous solutions containing precursors of Cd, In and Se have been used to obtain good quality deposits at different substrate temperatures. The preparative parameters, such as substrate temperature and concentration of precursor solution have been optimized and are found to be 280 deg. C and 0.0125 M, respectively. The films have been characterized by X-ray diffraction (XRD), optical absorption and energy dispersive analysis by X-rays (EDAX) techniques. The spray-deposited CdIn2Se4 films are polycrystalline with cubic crystal structure. The optical absorption studies reveal that the transition is direct with band gap energy Eg=1.92 eV. The EDAX studies reveal that the films obtained at substrate temperature 280 deg. C are nearly stoichiometric
[en] Research highlights: → Synthesis of stoichiometric n-CdIn2Se4 films using economical SPT. → Use of PEC method to optimize preparative parameters. → Influence of solution concentration on physicochemical and PEC properties. - Abstract: Semiconducting n-CdIn2Se4 thin films have been deposited on to the amorphous and fluorine doped tin oxide (FTO) coated glass substrates using spray pyrolysis technique. The influence of solution concentration on to the photoelectrochemical, structural, morphological, compositional, thermal and electrical properties has been investigated. The PEC characterization shows that the short circuit current (Isc) and open circuit voltage (Voc) are at their optimum values (Isc = 1.04 mA and Voc = 409 mV) at the optimized precursor concentration (12.5 mM). The structural analysis shows the films are polycrystalline in nature having cubic crystal structure. The average crystallite size determined was in the range of 50-66 nm. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays, respectively. The addition of solution concentration induces a decrease in the electrical resistivity of CdIn2Se4 films up to 12.5 mM solution concentration. The type of semiconductor was examined from thermoelectric power measurement.
[en] Ternary chalcogenides with appropriate bandgap energy have been attracting a great deal of attention because of their potential applications in photovoltaics. CdIn2Se4 in the form of thin films is prepared at different substrate temperatures by a simple and economical spray pyrolysis technique. The films have been characterized by PEC, XRD, EDAX, and electrical measurement techniques. The photoelectrochemical characterization shows that both I sc and V oc are at their optimum values at the optimized substrate temperature of 280 deg. C. The annealing study reveals that the films annealed for 4 h show relatively maximum values of I sc and V oc. The XRD patterns show that the films are polycrystalline with crystallite size 24.8 nm for the film deposited at optimized preparative parameters. Compositional analysis reveals that the material formed is nearly stoichiometric at the optimized substrate temperature. The electrical resistivity measurement shows that the films are semiconducting at minimum resistivity. The thermoelectric power measurement reveals that the thermoelectric power is relatively maximum at substrate temperature 280 deg. C