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No abstract available

[en] The effect of manganese doping during the growth process on the γ-irradiation-induced degradation of the electric and recombination parameters of a silicon single crystal has been studied. It is shown that the rate of accumulation of radiation defects is lower in the presence of manganese, irrespective of the doping method. This is explained by the formation of manganese complexes which play the role of centers of indirect annihilation of radiation defects

[en] The dose dependence of the photoluminescence of porous silicon under α irradiation was investigated. It was found that the form and the position of the photoluminescence spectrum on the energy scale do not depend on the α irradiation. The intensity of the photoluminescence decreases exponentially with increasing α-irradiation dose

[en] Defect accumulation is studied in (111) Si bombarded by atomic and molecular nitrogen ions N+1 and N+2 with energies of 30 keV/atom. Radiation defects were initially created in the test samples by argon ions. An N+2 ion was found to create more defects than two N+1 ions. The necessary condition for this molecular effect is prior radiation damage in the Si

[en] The influence of excess silicon in the growth cell on the doping level of SiC-6H epitaxial layers grown by vacuum sublimation has been investigated. It is shown that an increase in silicon vapor pressure due to a transition from SiC-C to SiC-Si systems may increase the uncompensated donor impurity concentration in n-type epitaxial layers by more than an order of magnitude. The experimental data have been interpreted in terms of the difference between the positions of the donor and acceptor impurity atoms in the SiC crystal lattice (in the carbon and silicon sublattices, respectively). The structural perfection of as-grown epitaxial layers has been studied by x-ray diffraction

[en] The properties of thin films of amorphous hydrogenated silicon depend on the chemical composition and the structural peculiarities. A method is proposed for controlling the properties of a-Si:H films by modifying the subsystem of defect states. The observed effects are examined on the basis of the localized-phonon model