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[en] The dose dependence of the photoluminescence of porous silicon under α irradiation was investigated. It was found that the form and the position of the photoluminescence spectrum on the energy scale do not depend on the α irradiation. The intensity of the photoluminescence decreases exponentially with increasing α-irradiation dose

[en] Defect accumulation is studied in (111) Si bombarded by atomic and molecular nitrogen ions N+1 and N+2 with energies of 30 keV/atom. Radiation defects were initially created in the test samples by argon ions. An N+2 ion was found to create more defects than two N+1 ions. The necessary condition for this molecular effect is prior radiation damage in the Si

[en] The influence of excess silicon in the growth cell on the doping level of SiC-6H epitaxial layers grown by vacuum sublimation has been investigated. It is shown that an increase in silicon vapor pressure due to a transition from SiC-C to SiC-Si systems may increase the uncompensated donor impurity concentration in n-type epitaxial layers by more than an order of magnitude. The experimental data have been interpreted in terms of the difference between the positions of the donor and acceptor impurity atoms in the SiC crystal lattice (in the carbon and silicon sublattices, respectively). The structural perfection of as-grown epitaxial layers has been studied by x-ray diffraction

[en] The properties of thin films of amorphous hydrogenated silicon depend on the chemical composition and the structural peculiarities. A method is proposed for controlling the properties of a-Si:H films by modifying the subsystem of defect states. The observed effects are examined on the basis of the localized-phonon model

[en] A new theory is proposed for recombination and charge transport in polycrystalline semiconductors exposed to optical radiation. Relations are derived for the height of the intercrystallite potential barriers (Vs), the recombination current density at grain boundaries (jR), the effective lifetime of minority carriers (τp), and the conductivity (σ) as a function of the level of photoexcitation (G) of the polycrystal. The relations are valid for any value of Lb/d, where Lb is the diffusion length of minority carriers in the volume of the grains in the polycrystal, and d is the grain size. Plots of Vs, jR, τp, and σ versus G and d in polycrystalline silicon are presented