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AbstractAbstract
[en] The conference presents papers on electronic materials, plasma science, thin films, applied surface science, surface science, vacuum metallurgy, vacuum technology, and joint sessions. Particular attention is given to plasma processing, strained-layer superlattices, semiconductor surfaces and interfaces, and metalorganic molecular-beam epitaxy growth. Other topics include electronic materials interfaces, metal-semiconductor interfaces, diagnostics for plasma processes, plasma materials interactions, plasma enhanced chemical vapor deposition and processing, and inertial confinement fusion target technology
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35. national vacuum symposium; Atlanta, GA (USA); 2-7 Oct 1988; CONF-881002--
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CHEMICAL VAPOR DEPOSITION, CRYSTAL GROWTH, ELECTRONIC EQUIPMENT, INERTIAL CONFINEMENT, INTERACTIONS, INTERFACES, MEETINGS, METALLURGY, PLASMA, PLASMA ARC SPRAYING, PLASMA DIAGNOSTICS, RADIATION DETECTORS, SEMICONDUCTOR DEVICES, SOLAR CELLS, SOLID STATE PHYSICS, SPUTTERING, SUPERLATTICES, TARGETS, THERMONUCLEAR REACTIONS, THIN FILMS
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[en] The present conference discusses sputtering and bombardment effects in thin films, process property relationships, thin films for magnetic, optical, ferroelectric, and piezoelectric applications, CVD and activated vapor deposition processes, cluster ion beam deposition, thin film interconnects and packaging, thin film deposition and characterization, the mechanisms of nucleation, epitaxy, and growth, laser deposition and processing, plasma modeling, plasma etching, inertial confinement plasma technology, electron cyclotron resonance, modulated plasma processing, the oxidation and nitridation of semiconductors, metal-semiconductor interfaces, composite interfaces, diamond and diamondlike films, and ion-assisted deposition and surface modification. Also discussed are chemical effects in electron spectroscopy, polymer surfaces and interfaces, adsorption and desorption, surface atomic and electronic structures, vacuum pumps, electron cyclotron resonance plasmas, epitaxy and chemical growth techniques, and heterojunctions and superlattices
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36. American Vacuum Society national vacuum symposium; Boston, MA (USA); 23-27 Oct 1989; CONF-891093--
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ALUMINIUM OXIDES, AMORPHOUS STATE, CATHODES, CHEMICAL VAPOR DEPOSITION, COMPOSITE MATERIALS, DEPOSITION, ELECTRONIC EQUIPMENT, HETEROJUNCTIONS, INERTIAL CONFINEMENT, ION BEAMS, MAGNETIC PROPERTIES, MEETINGS, MICROSTRUCTURE, NITROGEN IONS, PLASMA, PLASMA DIAGNOSTICS, POLYMERS, PROTECTIVE COATINGS, SEMICONDUCTOR MATERIALS, SILICON OXIDES, SPUTTERING, SURFACES, THIN FILMS, TITANIUM NITRIDES, VACUUM PUMPS
ALUMINIUM COMPOUNDS, BEAMS, CHALCOGENIDES, CHARGED PARTICLES, CHEMICAL COATING, COATINGS, CONFINEMENT, CRYSTAL STRUCTURE, ELECTRODES, EQUIPMENT, FILMS, IONS, MATERIALS, NITRIDES, NITROGEN COMPOUNDS, OXIDES, OXYGEN COMPOUNDS, PHYSICAL PROPERTIES, PLASMA CONFINEMENT, PNICTIDES, PUMPS, SEMICONDUCTOR JUNCTIONS, SILICON COMPOUNDS, SURFACE COATING, TITANIUM COMPOUNDS, TRANSITION ELEMENT COMPOUNDS
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[en] The adsorption of CO, CO2, and H2 O, the coadsorption of oxygen and H2 O, and the coadsorption of CO and surface hydroxyl (OH/sub a/)= on clean and cesium-covered Cu(110) surfaces have been studied with thermal desorption mass spectroscopy, x-ray photoelectron spectroscopy, Auger electron spectroscopy, and work function measurements. We review here results which show that the presence of preadsorbed cesium dramatically affects the adsorption behavior and surface chemistry of CO, CO2, and H2 O on Cu(110). We also present new results which show that surface formate (HCOO/sub a/) is not produced in any observable amount upon heating coadsorbed CO/sub a/ and OH/sub a/ on clean or Cs-dosed Cu(110). The implication of these results to Cs promotion of the catalytic water--gas shift and methanol synthesis reactions over Cu will be discussed
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Numerical Data
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[en] The growth of Nb and Ta films on Pd(111) and their modification of CO chemisorption are studied using ultraviolet photoelectron spectroscopy (UPS), low-energy electron diffraction, and low-energy ion scattering (LEIS). At 300 K, LEIS shows significant amounts of Pd in the top layer even after more than a monolayer of Nb or Ta is deposited. This is in contrast to Pd on Nb or Ta(110) where a Pd monolayer completely covers the substrate. UPS shows that the surface electronic structure at monolayer Nb or Ta coverage resembles that of a Pd monolayer on Nb or Ta(110) and is characterized by strong Pd 4d emission 1--4 eV below E/sub f/ and a low density of states at E/sub f/. Molecular CO adsorption is observed at submonolayer coverage; there is little CO adsorption at monolayer coverage and dissociative CO adsorption starts at greater than monolayer coverage. It is concluded that the deposited Nb or Ta monolayers intermix with the Pd(111) substrate and it is also shown that this behavior can be understood by examining the energetics of the system
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Numerical Data
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[en] The Fermi surfaces for the surface-localized states on W(011) are experimentally determined using high-resolution angle-resolved photoemission. The significance of our results in terms of phonon anomalies, hydrogen-induced reconstruction, and work function changes is examined
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[en] Molybdenum disilicide films have been sputtered onto sapphire and silicon substrates with a wide range of grain sizes achieved by postdeposition vacuum anneals at temperatures ranging between 200 and 1000 0C. Grain size of each film is determined by measurement of the breadth of observed x-ray diffraction peaks. Electrical resistivity as a function of temperature and room-temperature Hall effect has been measured for each film. Transport properties are related to grain size using scattering models developed for polycrystalline metals. A close fit to theory is obtained
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[en] We consider interfacial chemistry and band bending behavior for Al, In, Ag, and Pt overlayers on vacuum-cleaved p-CdTe and p-ZnTe (110) in a comparative study using ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy. A range of metal--substrate reactivities have been considered: Al reacts strongly with Te, Ag moderately, and In minimally, with no evidence seen for In reaction on ZnTe. Pt exhibits strong alloying behavior with both Cd and Zn. These results for the binaries are compared to metal/HgCdTe interface formation. We find that Hg loss can significantly influence the extent of reaction and/or intermixing for these overlayers, with resulting disruption either inhibiting or facilitating chemical interaction. Reaction and intermixing for Al, Ag, and Pt overlayers on CdTe and ZnTe indicate these interfaces are not ideal. The possible role of defects at these four metal/CdTe and metal/ZnTe interfaces is considered, and provides a consistent explanation for the final Fermi level positions observed
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[en] We discuss a magnetotransport and magneto-optical investigation of [211]-oriented HgTe--CdTe superlattices. Measurements were performed on seven n-type samples with well widths in the range 41--125 A and energy gaps between 0 and 128 meV. Both magnetotransport and magneto-optical results give evidence for an additional electron species besides the superlattice electrons and holes usually observed. We show that although these have quasi-two-dimensional character, their mobilities are quite sensitive to the superlattice well thickness. These findings are interpreted in terms of band bending and charge transfer from the CdTe substrate into the superlattice. We also discuss the first theoretical calculations of the band structure for [211]-oriented HgTe--CdTe heterostructures
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[en] We have observed and described magneto-optical transitions between impurity/defect levels and conduction band Landau levels for a variety of n-type HgCdTe samples with 0.2< x<0.3. The activation energies of these levels fall into two categories: (1) 10--12 meV above the valence band edge, independent of Eg and (2) two close spaced levels at congruent 0.5 Eg. In addition, the spectra of several narrow gap (Eg≤100 meV) samples exhibit shallower and deeper acceptor-like levels
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[en] Small, open ended, parylene cylinders of 150 μm diameter, 250 μm length and 10 μm wall thickness are manufactured and filled with solutions of acrylate monomers which are polymerised in situ with uv light to produce gels. These gels are then precipitated in a non-solvent such as methanol and dried in a critical point drying apparatus to produce foam-filled parylene cylinders for use in laser-driven plasma experiments. The foams have densities in the range of 20 to 200 mg cm-3 and cell sizes of up to 1 μm, fill the cylinders completely, do not shrink during the drying process and do not require subsequent machining
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