Published December 1995
| Version v1
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The influence of pressure on energy gap of n-Si monocrystals
- 1. Tashkentskij Gosudarstvennyj Univ., Tashkent (Uzbekistan)
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no abstract available
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29010035.pdf
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Additional details
Additional titles
- Original title (Russian)
- Влияние давления на ширину запрещенной зоны монокристаллов н-Си
Publishing Information
- Imprint Title
- Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics
- Imprint Pagination
- 171 p.
- Journal Page Range
- p. 78.
- Report number
- INIS-UZ--043
Conference
- Title
- Modern problems on physics of semiconductors and dielectrics.
- Dates
- 20-22 Dec 1995.
- Place
- Tashkent (Uzbekistan).
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 29010035
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ENERGY GAP; FERMI LEVEL; NICKEL ADDITIONS; PRESSURE DEPENDENCE; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- ELEMENTS; ENERGY LEVELS; MATERIALS; SEMIMETALS
Optional Information
- Notes
- 1 tab.