Published December 1995
| Version v1
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Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics
Description
The International Conference on modern problems of physics of semiconductor and dielectric materials was held on 20-22 December, 1995 in Tashkent, Uzbekistan. The specialists discussed various aspects of modern problems of both fundamental and applied physics of semiconductors and dielectrics. More than 160 talks were presented in the meeting on the following subjects: electrophysical properties of semiconductors and dielectrics; structure studies of semiconductors and the technological processes; admixtures in semiconductors; photoelectric phenomena; radiation effects in semiconductors and dielectrics; semiconductor devices and methodical elaborations. (A.A.D.)
Availability note (English)
Available from INIS in electronic form and/or on microfiche .Files
29010003.pdf
Files
(8.1 MB)
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Additional details
Publishing Information
- Imprint Pagination
- 171 p.
- Report number
- INIS-UZ--043
Conference
- Title
- Modern problems on physics of semiconductors and dielectrics.
- Dates
- 20-22 Dec 1995.
- Place
- Tashkent (Uzbekistan).
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 29010003
- Subject category
- S36: MATERIALS SCIENCE; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Is Lead record
- Yes
- Descriptors DEI
- DIELECTRIC MATERIALS; LEADING ABSTRACT; MEETINGS; PHYSICAL RADIATION EFFECTS; PROCEEDINGS; SEMICONDUCTOR MATERIALS; SOLID STATE PHYSICS; UZBEKISTAN
- Descriptors DEC
- ABSTRACTS; ASIA; MATERIALS; PHYSICS; RADIATION EFFECTS