Published December 1995 | Version v1
Miscellaneous Open

Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics

Description

The International Conference on modern problems of physics of semiconductor and dielectric materials was held on 20-22 December, 1995 in Tashkent, Uzbekistan. The specialists discussed various aspects of modern problems of both fundamental and applied physics of semiconductors and dielectrics. More than 160 talks were presented in the meeting on the following subjects: electrophysical properties of semiconductors and dielectrics; structure studies of semiconductors and the technological processes; admixtures in semiconductors; photoelectric phenomena; radiation effects in semiconductors and dielectrics; semiconductor devices and methodical elaborations. (A.A.D.)

Availability note (English)

Available from INIS in electronic form and/or on microfiche .

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Additional details

Publishing Information

Imprint Pagination
171 p.
Report number
INIS-UZ--043

Conference

Title
Modern problems on physics of semiconductors and dielectrics.
Dates
20-22 Dec 1995.
Place
Tashkent (Uzbekistan).

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
29010003
Subject category
S36: MATERIALS SCIENCE; S42: ENGINEERING;
Resource subtype / Literary indicator
Conference
Is Lead record
Yes
Descriptors DEI
DIELECTRIC MATERIALS; LEADING ABSTRACT; MEETINGS; PHYSICAL RADIATION EFFECTS; PROCEEDINGS; SEMICONDUCTOR MATERIALS; SOLID STATE PHYSICS; UZBEKISTAN
Descriptors DEC
ABSTRACTS; ASIA; MATERIALS; PHYSICS; RADIATION EFFECTS