Published 1998
| Version v1
Miscellaneous
Properties of GaAs layers doped with ytterbium and aluminium
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 5. Polish Conference on Crystal Growth
- Imprint Pagination
- [100 p.]
- Journal Page Range
- p. P.II.06
Conference
- Title
- 5. Polish Conference on Crystal Growth
- Dates
- 10-13 May 1998
- Place
- Naleczow (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31023383
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM ADDITIONS; DOPED MATERIALS; ELECTRICAL PROPERTIES; EPITAXY; GALLIUM ARSENIDES; MEETINGS; MICROSTRUCTURE; PHOTOLUMINESCENCE; THIN FILMS; YTTERBIUM ADDITIONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EMISSION; FILMS; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; RARE EARTH ADDITIONS