Published 2007
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Making the nano structures on the basis of GaAs-AlxGa1-xAs by MOSVD method
- 1. Namangan State University, Namangan (Uzbekistan)
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no abstract available
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38115509.pdf
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Additional details
Additional titles
- Original title (Russian)
- Изготовление наноструктур на основе GaAs-AI
Publishing Information
- Imprint Place
- Tashkent (Uzbekistan)
- Imprint Title
- Proceedings of conference 'Fundamental and applied problems of modern physics'
- Imprint Pagination
- 214 p.
- Journal Page Range
- p. 69-71
- Report number
- INIS-UZ--126
Conference
- Title
- Republic scientific-practical conference on 'Fundamental and applied problems of modern physics'
- Original Conference Title
- Zamonavij fizikaning fundamental va amalij muammolari
- Dates
- 18-19 May 2007
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 38115509
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ELECTRONS; GALLIUM ARSENIDES; LAYERS; MOSFET; N-TYPE CONDUCTORS; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0400-1000 K; VAPOR PHASE EPITAXY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELEMENTARY PARTICLES; EPITAXY; FERMIONS; FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; LEPTONS; MATERIALS; MOS TRANSISTORS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE; TRANSISTORS
Optional Information
- Notes
- 3 refs., 1 fig. Imprint:'Zamonavij fizikaning fundamental va amalij muammolari' mavzusidagi konferentsija materiallari to'plami