Characterization of thin films by XPS, AES and LIMA techniques

Film of hydrogenated amorphous silicon carbide (a-Sic:H) have been prepared by a glow discharge decomposition from gas mixture of propane (C/sub 3/H/sub 4/) in order to examine the effect of hydrocarbon gases on the structural and optical properties of these films, microstructural investigations were mainly achieved by mean of x-ray photoelectron spectroscopy (XPS), auger electron spectroscopy (AES) and laser ionization mass analysis (LIMA) techniques. The influence of the deposition parameters was studied by selection of growth conditions and the closer investigation of limited range of such conditions, Samples were analysed with XPS, AES, LIMA to get information about the amount and distribution. Samples were analysed with XPS, AES, LIMA to get information about the amount and distribution of H, Si and C in the amorphous network. Depth profiling was performed by sputtering with Ar+ ions. The identical increase of Si 2p and C 1s binding energy difference, the statistical distribution of Si and C atoms. The distribution of isotopic peak for the cluster ion Si/sub 2/CO/sub 3/ and Si3+ were calculated and the positive ion spectrum in dominated by Si/sub x/C/sub y/+ cluster ions. These results show that XPS and LIMS seems to be very promising and accurate methods not only for detection of Si, C and depth profiling of amorphous silicon based alloys but also for qualification and evaluation of possible fragmentation mechanisms. (author) 6 figs