Published December 1995
| Version v1
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The obtaining and investigation of hetero structure in InGaAsSb/GaSb system
Description
no abstract available
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29010025.pdf
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Additional details
Additional titles
- Original title (Russian)
- Получение и исследование гетероструктур в системе InGaAsSb/GaSb
Publishing Information
- Imprint Title
- Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics
- Imprint Pagination
- 171 p.
- Journal Page Range
- p. 58.
- Report number
- INIS-UZ--043
Conference
- Title
- Modern problems on physics of semiconductors and dielectrics.
- Dates
- 20-22 Dec 1995.
- Place
- Tashkent (Uzbekistan).
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 29010025
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANTIMONY; ARSENIC; ELECTROLUMINESCENCE; EPITAXY; GADOLINIUM; INDIUM; PHOTOLUMINESCENCE; SOLID SOLUTIONS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; DISPERSIONS; ELEMENTS; EMISSION; HOMOGENEOUS MIXTURES; LUMINESCENCE; METALS; MIXTURES; PHOTON EMISSION; RARE EARTHS; SEMIMETALS; SOLUTIONS
Optional Information
- Notes
- 3 refs.