Published 2007
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The effect of erbium on thermal defect formation in silicon
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no abstract available
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38115537.pdf
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Additional details
Additional titles
- Original title (Russian)
- Влияние эрбия на термическое дефектообразование в кремнии
Publishing Information
- Imprint Place
- Tashkent (Uzbekistan)
- Imprint Title
- Proceedings of conference 'Fundamental and applied problems of modern physics'
- Imprint Pagination
- 214 p.
- Journal Page Range
- p. 141-143
- Report number
- INIS-UZ--126
Conference
- Title
- Republic scientific-practical conference on 'Fundamental and applied problems of modern physics'
- Original Conference Title
- Zamonavij fizikaning fundamental va amalij muammolari
- Dates
- 18-19 May 2007
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 38115537
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL DOPING; CZOCHRALSKI METHOD; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTROMOTIVE FORCE; ERBIUM; HALL EFFECT; HEAT TREATMENTS; N-TYPE CONDUCTORS; RARE EARTHS; SILICON; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; METALS; PHYSICAL PROPERTIES; RARE EARTHS; SEMICONDUCTOR MATERIALS; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- Imprint:'Zamonavij fizikaning fundamental va amalij muammolari' mavzusidagi konferentsija materiallari to'plami