Published December 1995 | Version v1
Miscellaneous Open

Influence of γ-radiation on the properties of film structure pCdTe-nCdTe-nCdS

  • 1. AN Uzbekskoj SSR, Tashkent (Uzbekistan). Fiziko-Tekhnicheskij Inst

Description

no abstract available

Files

29010063.pdf

Files (62.6 kB)

Name Size Download all
md5:01171ea5ebc91cfb5947aa3aa2a22cc8
62.6 kB Preview Download

System files (3.9 kB)

Name Size Download all
Part of:
Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics

Additional details

Additional titles

Original title (Russian)
Воздействие γ-облучения на свойства плёночной структуры pCdTe–nCdTe–nCdS

Publishing Information

Imprint Title
Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics
Imprint Pagination
171 p.
Journal Page Range
p. 133.
Report number
INIS-UZ--043

Conference

Title
Modern problems on physics of semiconductors and dielectrics.
Dates
20-22 Dec 1995.
Place
Tashkent (Uzbekistan).

Optional Information