Published December 1995
| Version v1
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The influence of ion doping by impurities of Li, Na, K, Cs on radiation hardness of silicon solar elements
Creators
- 1. AN RU, Tashkent (Uzbekistan). Inst. Ehlektroniki
Description
no abstract available
Files
29010055.pdf
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Additional details
Additional titles
- Original title (Russian)
- Влияние ионного легирования примесями Li, Na, K, Cs на радиационную стойкость кремниевых солнечных элементов
Publishing Information
- Imprint Title
- Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics
- Imprint Pagination
- 171 p.
- Journal Page Range
- p. 125.
- Report number
- INIS-UZ--043
Conference
- Title
- Modern problems on physics of semiconductors and dielectrics.
- Dates
- 20-22 Dec 1995.
- Place
- Tashkent (Uzbekistan).
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 29010055
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; CESIUM IONS; ELECTRON BEAMS; GAMMA RADIATION; HARDNESS; ION BEAMS; ION IMPLANTATION; LITHIUM ADDITIONS; MEV RANGE; PHYSICAL RADIATION EFFECTS; POTASSIUM IONS; SILICON SOLAR CELLS; SODIUM IONS
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ENERGY RANGE; EQUIPMENT; HEAT TREATMENTS; IONIZING RADIATIONS; IONS; LEPTON BEAMS; MECHANICAL PROPERTIES; PARTICLE BEAMS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; RADIATION EFFECTS; RADIATIONS; SOLAR CELLS; SOLAR EQUIPMENT