Depth distribution of phosphorus implanted into silicon

Concentration profiles generated by non-aligned implantation of phosphorus into silicon are presented. The profiles are characterised by three regions. The first region is represented by an approximately Gaussian distribution with the maximum value of concentration at 0.062 μm. It is followed by an intermediate region with a nearly exponential decrease of phosphorus concentration. The third region begins at concentrations of about 1017cm-3 to 1016cm-3, and it is characterised by a steeper exponential decrease of phosphorus concentration. The present results give good evidence on the tail saturation which is discussed in detail