The annealing of phosphorus-implanted silicon investigated at low temperatures

Phosphorus ions are implanted at 50 keV into misaligned silicon crystals at 20 and 300 0C, respectively. The ion doses used are 8 x 1013 and 8 x 1014 cm-2, respectively. After annealing treatments the electrical properties of the samples are investigated by measuring Hall effect and sheet resistivity in the range from 300 to 4.2 K. The experimental results indicate some problems which must be taken into account for interpreting Hall effect measurements made at room temperature only. Furthermore the results give some new information on the annealing process in phosphorus implanted silicon and the influence of the implantation parameters. (author)