Published December 1995
| Version v1
Miscellaneous
Open
The influence of thermal treatment and isochronous annealing on electric properties of Si
Creators
- 1. Tashkentskij Gosudarstvennyj Univ., Tashkent (Uzbekistan)
Description
no abstract available
Files
29010014.pdf
Files
(57.8 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:7ea33af2e92dd4458d5991765790667b
|
57.8 kB | Preview Download |
System files
(2.4 kB)
| Name | Size | Download all |
|---|
Additional details
Additional titles
- Original title (Russian)
- Влияние термообработки и изохронного отжига на электрические свойства Си
Publishing Information
- Imprint Title
- Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics
- Imprint Pagination
- 171 p.
- Journal Page Range
- p. 19.
- Report number
- INIS-UZ--043
Conference
- Title
- Modern problems on physics of semiconductors and dielectrics.
- Dates
- 20-22 Dec 1995.
- Place
- Tashkent (Uzbekistan).
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 29010014
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; ELECTRIC CONDUCTIVITY; ERBIUM; HALL EFFECT; IMPURITIES; NICKEL; SILICON; TEMPERATURE RANGE
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; METALS; PHYSICAL PROPERTIES; RARE EARTHS; SEMIMETALS; TRANSITION ELEMENTS