Published December 1995
| Version v1
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The investigation of hole transfer in a - Si :H
Creators
- 1. Namanganskij Gosudarstvennyj Univ., Namangan (Uzbekistan)
Description
no abstract available
Files
29010007.pdf
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Additional details
Additional titles
- Original title (Russian)
- Исследование дырочного переноса в а - Си :Х
Publishing Information
- Imprint Title
- Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics
- Imprint Pagination
- 171 p.
- Journal Page Range
- p. 9.
- Report number
- INIS-UZ--043
Conference
- Title
- Modern problems on physics of semiconductors and dielectrics.
- Dates
- 20-22 Dec 1995.
- Place
- Tashkent (Uzbekistan).
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 29010007
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CHARGE TRANSPORT; ELECTRIC CONDUCTIVITY; HOLES; HYDROGENATION; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SILICON
- Descriptors DEC
- CHEMICAL REACTIONS; CURRENTS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; PHYSICAL PROPERTIES; SEMIMETALS
Optional Information
- Notes
- 1 ref.