Published December 1995 | Version v1
Miscellaneous Open

The influence of joint doping with copper on the properties of sulfur and platinum in n-Si

  • 1. AN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki

Description

no abstract available

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Part of:
Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics

Additional details

Additional titles

Original title (Russian)
Влияние совместного легирования с медью на свойства серы и платины в н-Си

Publishing Information

Imprint Title
Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics
Imprint Pagination
171 p.
Journal Page Range
p. 81.
Report number
INIS-UZ--043

Conference

Title
Modern problems on physics of semiconductors and dielectrics.
Dates
20-22 Dec 1995.
Place
Tashkent (Uzbekistan).

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
29010038
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
CAPACITANCE; COPPER ADDITIONS; CRYSTAL DOPING; ELECTRICAL PROPERTIES; PLATINUM ADDITIONS; SILICON; SULFUR ADDITIONS
Descriptors DEC
ELEMENTS; PHYSICAL PROPERTIES; SEMIMETALS

Optional Information