Application of synchrotron radiation to submicron lithography

Relevant features of modern X-ray sources suitable for submicron lithography with special emphasis on synchrotron with classical, normal and superconducting storage rings are compared. Capability of such sources for X-ray lithographic fabrication of 100 nm lines and 0.5 micron devices such as ULSI and multimegabit memory are discussed. Selecting the materials for X-ray mask substrate as well as the technique of patterning absorber material over it are extremely critical. Use of advanced techniques such as reactive ion etching, ion beam patterning and electron beam lithography for their fabrication is discussed. Characteristics of positive/negative X-ray resists such as sensitivity and resolution, critically governing their suitability in lithographic applications are compared. The technology of alignments recently adopted for X-ray lithography is presented. Submicron patterns and devices like CMOS, BPF and deep grooves featured through dedicated and commercial X-ray systems have been sampled. (author). 5 refs., 2 figs., 2 tabs