Published 1993
| Version v1
Miscellaneous
Improvement of physical properties SI - GaAs crystals by heat treatment
Description
Short communication
Additional details
Additional titles
- Augmented title (English)
- Cr, V and In additives have been used
Publishing Information
- Publisher
- Inst.of Electronic Materials Techn. and Inst. of Physics - Polish Academy of Sciences.
- Imprint Place
- Warsaw (Poland)
- Imprint Title
- Abstracts of 3rd conference and general meeting of Polish Society on Crystal Growth
- Imprint Pagination
- 67 p.
- Journal Page Range
- p. 8.
Conference
- Title
- 3. Conference and General Meeting of Polish Society on Crystal Growth.
- Dates
- 11-13 May 1993.
- Place
- Warsaw (Poland).
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 28023242
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- ANNEALING; CHROMIUM ADDITIONS; CZOCHRALSKI METHOD; DOPED MATERIALS; ELECTRICAL PROPERTIES; GALLIUM ARSENIDES; INDIUM ADDITIONS; MEETINGS; MONOCRYSTALS; VANADIUM ADDITIONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CRYSTALS; GALLIUM COMPOUNDS; HEAT TREATMENTS; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES
Optional Information
- Contract/Grant/Project number
- Foundation for Polish Science PONT No. 40/43/92