Published September 1977
| Version v1
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Annealing of implanted Si surfaces by UV-reflection spectrometry
Creators
- 1. Zentralinstitut fuer Kernforschung, Rossendorf bei Dresden (German Democratic Republic)
Description
The shape of the reflection spectrum is characterized by a peak-trough ratio (PTR). Information on lattice defects and annealing are obtained by plotting PTR attained on different implantation and annealing conditions in dependence on the doping dose. This has been done for implantation of P, As, and B in Si and discussed in detail. (author)
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Additional details
Additional titles
- Original title (German)
- Untersuchung der Ausheilung implantationsgeschaedigter Si-Oberflaechen mit der UV-Reflexionsspektrometrie
Publishing Information
- Imprint Title
- Annual report 1977
- Journal Page Range
- p. 176-180.
- Report number
- ZfK--340
INIS
- Country of Publication
- German Democratic Republic
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 10431509
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Is Lead record
- Yes
- Descriptors DEI
- ANNEALING; ARSENIC IONS; BORON IONS; ION IMPLANTATION; KEV RANGE 10-100; PEAKS; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; SILICON; SPECTROSCOPY; SURFACES; ULTRAVIOLET RADIATION
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; RADIATION EFFECTS; RADIATIONS; SEMIMETALS
Optional Information
- Notes
- Imprint:Jahresbericht 1977.