Published September 1977
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Damage profiles in n-Si implanted by P and As and their annealing
Creators
- 1. Zentralinstitut fuer Kernforschung, Rossendorf bei Dresden (German Democratic Republic)
Description
Profiles of opto-effective lattice distortions have been obtained by UV-reflection spectrometry. The shape of the reflection spectrum is characterized by a peak-trough ratio describing the degree of lattice distortions. Such profiles for P-implantation (30 keV) and As-implantation (50 keV) at different tempering phases are shown and discussed. (author)
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Additional details
Additional titles
- Original title (German)
- Stoerungsprofile bei P- und As-Implantation in n-Si und ihre Ausheilung
Publishing Information
- Imprint Title
- Annual report 1977
- Journal Page Range
- p. 180-183.
- Report number
- ZfK--340
INIS
- Country of Publication
- German Democratic Republic
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 10431510
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ARSENIC IONS; DEPTH; ION IMPLANTATION; KEV RANGE 10-100; N-TYPE CONDUCTORS; PEAKS; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; SILICON; SPATIAL DISTRIBUTION
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Imprint:Jahresbericht 1977.