Published December 1995
| Version v1
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The investigation of the characteristics of the switching of irradiated diodes
- 1. Ferganskij Politekhnicheskij Inst., Fergana (Uzbekistan)
Description
no abstract available
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29010071.pdf
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Additional details
Additional titles
- Original title (Russian)
- Исследование характеристик переключения облученных диодов
Publishing Information
- Imprint Title
- Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics
- Imprint Pagination
- 171 p.
- Journal Page Range
- p. 141.
- Report number
- INIS-UZ--043
Conference
- Title
- Modern problems on physics of semiconductors and dielectrics.
- Dates
- 20-22 Dec 1995.
- Place
- Tashkent (Uzbekistan).
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 29010071
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ELECTRON BEAMS; IRRADIATION; P-N JUNCTIONS; POINT DEFECTS; SEMICONDUCTOR DIODES; SWITCHING DIODES
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; LEPTON BEAMS; PARTICLE BEAMS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS