Published December 1995
| Version v1
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Capacity spectroscopy of radiation defects on hetero boundary of Si -SiO2
- 1. Russian Academy of Science. St. Petersburg (Russian Federation) Fiziko-Tekhnicheskij Inst.
- 2. Tashkentskij Gosudarstvennyj Univ., Tashkent (Uzbekistan)
Description
no abstract available
Files
29010054.pdf
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Additional details
Additional titles
- Original title (Russian)
- Емкостная спектоскопия радиационных дефектов на гетерогранице Си -SiO
Publishing Information
- Imprint Title
- Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics
- Imprint Pagination
- 171 p.
- Journal Page Range
- p. 123-124.
- Report number
- INIS-UZ--043
Conference
- Title
- Modern problems on physics of semiconductors and dielectrics.
- Dates
- 20-22 Dec 1995.
- Place
- Tashkent (Uzbekistan).
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 29010054
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CAPACITANCE; CRYSTAL DEFECTS; ENERGY LEVELS; GAMMA RADIATION; MIS TRANSISTORS; PHYSICAL RADIATION EFFECTS; SILICON; SILICON OXIDES; SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; TRANSISTORS