Published December 1995
| Version v1
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Capacity spectroscopy of radiation defects in silicon with germanium impurity
- 1. Tashkentskij Gosudarstvennyj Univ., Tashkent (Uzbekistan)
Description
no abstract available
Files
29010064.pdf
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Additional details
Additional titles
- Original title (Russian)
- Емкостная спектроскопия радиационных дефектов в кремнии с примесью германия
Publishing Information
- Imprint Title
- Abstracts of the international conference on modern problems of physics of semiconductors and dielectrics
- Imprint Pagination
- 171 p.
- Journal Page Range
- p. 134.
- Report number
- INIS-UZ--043
Conference
- Title
- Modern problems on physics of semiconductors and dielectrics.
- Dates
- 20-22 Dec 1995.
- Place
- Tashkent (Uzbekistan).
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 29010064
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- A CENTERS; CAPACITANCE; CRYSTAL DOPING; E CENTERS; ENERGY LEVELS; GAMMA RADIATION; GERMANIUM ADDITIONS; PHYSICAL RADIATION EFFECTS; SILICON; SPECTROSCOPY
- Descriptors DEC
- COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; VACANCIES