Published 2007 | Version v1
Miscellaneous Open

Photo electrical properties of graded band gap (Si2)1-x(GaP)x solid solution grown on silicon

  • 1. NPO 'Physics-Sun', Physical-Technical Institute AS RU, Tashkent (Uzbekistan)
  • 2. National University of Usbekistan, Tashkent (Uzbekistan)
  • 3. V.Lashkaryov Institute of Semiconductor Physics NASU, Kiev (Ukraine)

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Part of:
Proceedings of conference 'Fundamental and applied problems of modern physics'

Additional details

Additional titles

Original title (Russian)
Варизонный твердый раствор (Си

Publishing Information

Imprint Place
Tashkent (Uzbekistan)
Imprint Title
Proceedings of conference 'Fundamental and applied problems of modern physics'
Imprint Pagination
214 p.
Journal Page Range
p. 183-185
Report number
INIS-UZ--126

Conference

Title
Republic scientific-practical conference on 'Fundamental and applied problems of modern physics'
Original Conference Title
Zamonavij fizikaning fundamental va amalij muammolari
Dates
18-19 May 2007
Place
Tashkent (Uzbekistan)

Optional Information

Notes
1 ref., 3 figs. Imprint:'Zamonavij fizikaning fundamental va amalij muammolari' mavzusidagi konferentsija materiallari to'plami