Published 2004
| Version v1
Miscellaneous
Lattice parameter measurements of boron doped Si single crystals
Creators
- 1. Institute of Materials Science, University of Silesia, Katowice (Poland)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 4. International Conference on Solid State Crystals - Materials Science and Applications and 7. Polish Conference on Crystal Growth
- Imprint Pagination
- 155 p.
- Journal Page Range
- p. B28
Conference
- Title
- 4. International Conference on Solid State Crystals - Materials Science and Applications and 7. Polish Conference on Crystal Growth
- Dates
- 16-20 Oct 2004
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 35102930
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ACCURACY; BORON ADDITIONS; CHEMICAL COMPOSITION; CZOCHRALSKI METHOD; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; LATTICE PARAMETERS; MONOCRYSTALS; SILICON; THERMAL EXPANSION; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; BORON ALLOYS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DIFFRACTION; ELECTRICAL PROPERTIES; ELEMENTS; EXPANSION; MATERIALS; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS